參數(shù)資料
型號(hào)： 934050290215
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： PLASTIC, SMD, 4 PIN
文件頁(yè)數(shù)： 11/16頁(yè)
文件大?。?/td> 145K
代理商： 934050290215
1997 Dec 08
4
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VG2-S = 4 V; VDS = 9 V; self-biasing current; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
note 1
350
K/W
Rth j-s
thermal resistance from junction to soldering point
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S = 0; ID =10 A11
V
V(BR)G1-SS gate 1-source breakdown voltage
VG2-S = 0; IG1-S =10 A; ID =0
11
V
V(BR)G2-SS gate 2-source breakdown voltage
VG1-S =VDS = 0; IG2-S =10 A11
V
VG2-S (th)
gate 2-source threshold voltage
VG1-S =9V; VDS =9V; ID =20 A
0.3
1.2
V
IDSX
self-biasing drain current
VG2-S =4V; VDS = 9 V
8
16
mA
IG1-SS
gate 1 cut-off current
VG1-S =9V; VG2-S = 0; ID =0
20
nA
IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =9V
20
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; Tj =25 °C24
30
mS
Cig1-ss
input capacitance at gate 1
f = 1 MHz
2.2
2.7
pF
Cig2-ss
input capacitance at gate 2
f = 1 MHz
1.5
pF
Coss
output capacitance
f = 1 MHz
1.3
pF
Crss
reverse transfer capacitance f = 1 MHz
25
40
fF
F
noise gure
f = 800 MHz; YS =YS opt
1.5
2.5
dB
Gp
power gain
GS = 2 mS; BS =BS opt; GL = 0.5 mS;
BL =BL opt; f = 200 MHz; see Fig.16
38
dB
GS = 3.3 mS; BS =BS opt; GL = 1 mS;
BL =BL opt; f = 800 MHz; see Fig.17
20
dB
Xmod
cross-modulation
input level for k = 1% at 0 dB AGC;
fw = 50 MHz; funw = 60 MHz; see Fig.18
85
dB
V
input level for k = 1% at 40 dB AGC;
fw = 50 MHz; funw = 60 MHz; see Fig.18
100
dB
V
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