參數(shù)資料
型號(hào)： 934050280115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： PLASTIC, SMD, 4 PIN
文件頁(yè)數(shù)： 9/16頁(yè)
文件大?。?/td> 145K
代理商： 934050280115
1997 Dec 08
2
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
up to 1 GHz
Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
VHF and UHF applications with 9 V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1109,
BF1109R and BF1109WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
PIN
DESCRIPTION
1
source
2
drain
3
gate 2
4
gate 1
Fig.1
Simplified outline
(SOT143B).
BF1109 marking code: NFp.
Top view
MSB014
12
3
4
Fig.2
Simplified outline
(SOT143R).
BF1109R marking code: NBp.
handbook, 2 columns
Top view
MSB035
1
2
4
3
Fig.3
Simplified outline
(SOT343R).
BF1109WR marking code: NB.
fpage
Top view
MSB842
21
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
11
V
ID
drain current (DC)
30
mA
Ptot
total power dissipation
Tamb ≤ 80 °C
200
mW
yfs
forward transfer admittance
30
mS
Cig1-ss
input capacitance at gate 1
2.2
2.7
pF
Crss
reverse transfer capacitance
f = 1 MHz
25
40
fF
F
noise gure
f = 800 MHz
1.5
2.5
dB
Xmod
cross-modulation
input level for k = 1% at 40 dB AGC 100
dB
V
Tj
operating junction temperature
150
°C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
相關(guān)PDF資料
PDF描述
934050370127 40 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934050380127 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934050390127 19.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934050400127 52 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934050420127 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
93405-0304 功能描述:集管和線殼 4CCT REV PICOFLEX SMT HEADER RoHS:否 產(chǎn)品種類:1.0MM Rectangular Connectors 產(chǎn)品類型:Headers - Pin Strip 系列:DF50 觸點(diǎn)類型:Pin (Male) 節(jié)距:1 mm 位置/觸點(diǎn)數(shù)量:16 排數(shù):1 安裝風(fēng)格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點(diǎn)材料:Brass 觸點(diǎn)電鍍:Gold 制造商:Hirose Connector
93405-0306 功能描述:集管和線殼 6CCT REV PICOFLEX SMT HEADER RoHS:否 產(chǎn)品種類:1.0MM Rectangular Connectors 產(chǎn)品類型:Headers - Pin Strip 系列:DF50 觸點(diǎn)類型:Pin (Male) 節(jié)距:1 mm 位置/觸點(diǎn)數(shù)量:16 排數(shù):1 安裝風(fēng)格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點(diǎn)材料:Brass 觸點(diǎn)電鍍:Gold 制造商:Hirose Connector
93405-0308 功能描述:集管和線殼 8CCT REV PICOFLEX SMT HEADER RoHS:否 產(chǎn)品種類:1.0MM Rectangular Connectors 產(chǎn)品類型:Headers - Pin Strip 系列:DF50 觸點(diǎn)類型:Pin (Male) 節(jié)距:1 mm 位置/觸點(diǎn)數(shù)量:16 排數(shù):1 安裝風(fēng)格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點(diǎn)材料:Brass 觸點(diǎn)電鍍:Gold 制造商:Hirose Connector
93405-0310 功能描述:集管和線殼 10CCT REV PICOFLEX SMT HEADER RoHS:否 產(chǎn)品種類:1.0MM Rectangular Connectors 產(chǎn)品類型:Headers - Pin Strip 系列:DF50 觸點(diǎn)類型:Pin (Male) 節(jié)距:1 mm 位置/觸點(diǎn)數(shù)量:16 排數(shù):1 安裝風(fēng)格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點(diǎn)材料:Brass 觸點(diǎn)電鍍:Gold 制造商:Hirose Connector
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