參數(shù)資料
型號: 934050240115
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 5 A, 10 V, PNP, Si, POWER TRANSISTOR
封裝: PLASTIC, SMD, SC-73, 4 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 48K
代理商: 934050240115
1999 Apr 29
2
Philips Semiconductors
Product specication
PNP BISS-transistor
BDL32
FEATURES
High current (max. 5 A)
Low voltage (max. 10 V)
Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
Battery powered units where high current and low power
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT223 plastic package. NPN complement: BDL31.
PINNING
PIN
DESCRIPTION
1
base
2
not connected
3
emitter
4
collector
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
12
3
MAM373
Top view
3
4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
10
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
5A
ICM
peak collector current
10
A
IBM
peak base current
1A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.35
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
相關PDF資料
PDF描述
934050290215 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
934054140215 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
934050280115 UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
934050370127 40 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
934050380127 34 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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