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| 型號(hào)： | 934049950165 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 8/12頁(yè) |
| 文件大小： | 65K |
| 代理商： | 934049950165 |
2001 Feb 16
5
Philips Semiconductors
Product specication
NPN/PNP resistor-equipped transistors
PUMD2
Fig.3
DC current gain as a function of collector
current; typical values.
TR1 (NPN); VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
MGM916
101
110
102
IC (mA)
hFE
103
10
102
1
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
1
(2)
(3)
(1)
101
102
MGM915
101
110
102
IC (mA)
VCEsat
(V)
Fig.5
Input-off voltage as a function of collector
current; typical values.
TR1 (NPN); VCE =5V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
10
(2)
(3)
(1)
1
101
MGM918
102
101
110
IC (mA)
Vi(off)
(V)
Fig.6
Input-on voltage as a function of collector
current; typical values.
TR1 (NPN); VCE = 0.3 V.
(1) Tamb = 40 °C.
(2) Tamb =25 °C.
(3) Tamb = 100 °C.
handbook, halfpage
102
1
10
101
MGM917
101
110
102
IC (mA)
Vi(on)
(V)
(1) (2) (3)
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