參數(shù)資料
型號(hào): 934045780114
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 5/14頁
文件大?。?/td> 310K
代理商: 934045780114
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Product INFOrmation page
Information as of 2001-05-23
BLS2731-110; Microwave power transistor
product online
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Description
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NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a
ceramic cap (SOT423A) with the common base connected to the flange.
Features
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Suitable for short and medium pulse applications
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Internal input and output matching networks for an easy circuit design
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Emitter ballasting resistors improve ruggedness
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Gold metallization ensures excellent reliability
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Interdigitated emitter-base structure provides high emitter efficiency
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Multicell geometry improves power sharing and reduces thermal resistance.
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Applications
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Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.
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Datasheet
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Page
count
File
size
(kB)
Datasheet
BLS2731-110 Microwave power
transistor
30-Jan-98
Product
Specification
12
72
PDF
Products, packages, availability and ordering
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BLS2731-110
TRAY
9340 457 80114
Standard Marking
* Trade Pack
SOT423A Full production
Parametrics
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Philips Semiconductors: Product information on BLS2731-110, Microwave power transistor
file:///J|/imaging/BITTING/mail_pdf/cpl_images/bls2731-110.html (1 of 2) [7/20/2001 4:56:39 PM]
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