參數(shù)資料
型號(hào)： 934043420118
廠商： NXP SEMICONDUCTORS
元件分類： 整流器
英文描述： 10 A, 40 V, SILICON, RECTIFIER DIODE
封裝： PLASTIC, SMD, D2PAK-3
文件頁數(shù)： 1/6頁
文件大?。?/td> 42K
代理商： 934043420118
Philips Semiconductors
Product specification
Rectifier diodes
PBYR2045CT, PBYR2045CTB series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 40 V/ 45 V
Fast switching
Reverse surge capability
I
O(AV) = 20 A
High thermal cycling performance
Low thermal resistance
V
F ≤ 0.57 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2045CT series is supplied in the SOT78 conventional leaded package.
The PBYR2045CTB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR20
40CT
45CT
PBYR20
40CTB
45CTB
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 106 C
-
40
45
V
I
O(AV)
Average rectified forward
square wave;
δ = 0.5;
-
20
A
current (both diodes
T
mb ≤ 128 C
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5;
-
20
A
current per diode
T
mb ≤ 128 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current per diode
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
1. It is not possible to make connection to pin 2 of the SOT404 pckage.
k
a1
a2
13
2
13
tab
2
12 3
tab
October 1998
1
Rev 1.400
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