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參數(shù)資料
| 型號(hào)： | 934042750112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 5 MHz - 75 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 934042750112 |
2001 Oct 18
3
Philips Semiconductors
Product specication
75 MHz, 30 dB gain reverse amplier
BGY68
CHARACTERISTICS
Table 1
Bandwidth 5 to 75 MHz; VB = +24 V; Tmb =30 °C; ZS =ZL =75
Notes
1. fp = 19 MHz; Vp = 50 dBmV;
fq = 31 MHz; Vq = 50 dBmV;
measured at fp +fq = 50 MHz.
2. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 10 MHz
29.2
30.8
dB
SL
slope cable equivalent
f = 5 to 75 MHz
0.2
+0.5
dB
FL
atness of frequency response
f = 5 to 75 MHz
±0.2
dB
S11
input return losses
f = 5 to 75 MHz
20
dB
S22
output return losses
f = 5 to 50 MHz
20
dB
f = 50 to 75 MHz
18
dB
CTB
composite triple beat
4 channels at; Vo = 50 dBmV;
measured at 25 MHz
68
dB
Xmod
cross modulation
4 channels at; Vo = 50 dBmV;
measured at 25 MHz
60
dB
d2
second order distortion
note 1
70
dB
F
noise gure
f = 75 MHz
3.5
dB
Itot
total current consumption (DC)
note 2
135
mA
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