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參數(shù)資料
| 型號： | 934042630115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SMD, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 934042630115 |
1999 Apr 12
3
Philips Semiconductors
Product specication
NPN general purpose transistor
2PD1820A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
10
nA
IE = 0; VCB =20V; Tj = 150 °C
5
A
IEBO
emitter cut-off current
IC = 0; VEB =4V
10
nA
hFE
DC current gain
IC = 150 mA; VCE = 10 V; note 1
2PD1820AQ
85
170
2PD1820AR
120
240
2PD1820AS
170
340
hFE
DC current gain
IC = 500 mA; VCE = 10 V; note 1
40
VCEsat
collector-emitter saturation voltage
IC = 300 mA; IB = 30 mA; note 1
600
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
15
pF
fT
transition frequency
IC = 50 mA; VCE = 10 V; f = 100 MHz;
note 1
150
MHz
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