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參數(shù)資料
| 型號： | 934042530165 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SMD, SC-88, 6 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 934042530165 |
2001 Oct 26
3
Philips Semiconductors
Product specication
NPN/PNP general purpose transistor
BC847BPN
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per device
Rth j-a
thermal resistance from junction to ambient
note 1
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor unless otherwise specied; for the PNP transistor with negative polarity
ICBO
collector cut-off current
IE = 0; VCB =30V
15
nA
IE = 0; VCB =30V; Tj = 150 °C
5
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC = 2 mA; VCE = 5 V
200
450
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
100
mV
IC = 100 mA; IB = 5 mA; note 1
300
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
755
mV
VBE
base-emitter voltage
IC = 2 mA; VCE =5V
TR1 NPN
580
655
700
mV
TR2 PNP
600
655
750
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
TR1 NPN
1.5
pF
TR2 PNP
2.2
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
TR1 NPN
11
pF
TR2 PNP
10
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz
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