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參數(shù)資料
| 型號： | 934042530135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SMD, SC-88, 6 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 51K |
| 代理商： | 934042530135 |
2001 Oct 26
2
Philips Semiconductors
Product specication
NPN/PNP general purpose transistor
BC847BPN
FEATURES
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and boardspace
No mutual interference between the transistors.
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN/PNP transistor pair in an SC-88; SOT363 plastic
package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BC847BPN
13t
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
Fig.1
Simplified outline (SC-88; SOT363)
and symbol.
handbook, halfpage
13
2
4
5
6
Top view
MAM341
13
2
TR1
TR2
6
4
5
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
45
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
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