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參數(shù)資料
| 型號(hào)： | 934041650118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 6 A BUF OR INV BASED PRPHL DRVR, PSSO4 |
| 封裝： | PLASTIC, SOT-426, D2PAK-5 |
| 文件頁(yè)數(shù)： | 9/15頁(yè) |
| 文件大?。?/td> | 156K |
| 代理商： | 934041650118 |
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Philips Semiconductors
Product specification
TOPFET high side switch
BUK205-50Y
SMD version of BUK201-50Y
STATIC CHARACTERISTICS
T
mb = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
V
BG
Battery to ground
I
G = 1 mA
50
55
65
V
BL
Battery to load
I
L = IG = 1 mA
50
55
65
V
-V
LG
Negative load to ground
I
L = 1 mA
12
17
21
V
Supply voltage
battery to ground
V
BG
Operating range
1
-5
-
40
V
Currents
V
BG = 13 V
I
L
Nominal load current
2
V
BL = 0.5 V; Tmb = 85 C
6
-
A
I
B
Quiescent current
3
V
IG = 0 V; VLG = 0 V
-
0.1
2
A
I
G
Operating current
4
V
IG = 5 V; IL = 0 A
1.5
2.2
4
mA
I
L
Off-state load current
5
V
BL = 13 V; VIG = 0 V
-
0.1
1
A
Resistances
R
ON
On-state resistance
6
V
BG = 13 V; IL = 7.5 A; tp = 300 s
-
45
60
m
R
ON
On-state resistance
V
BG = 5 V; IL = 1.5 A; tp = 300 s
-
70
90
m
R
G
Internal ground resistance
I
G = 10 mA
-
150
-
INPUT CHARACTERISTICS
T
mb = 25 C; VBG = 13 V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
Input current
V
IG = 5 V
35
60
100
A
V
IG
Input clamping voltage
I
I = 200 A
6
7.5
8.5
V
IG(ON)
Input turn-on threshold voltage
-
2.1
2.7
V
IG(OFF)
Input turn-off threshold voltage
1.5
2
-
V
1 On-state resistance is increased if the supply voltage is less than 9 V. Refer to figure 8.
2 Defined as in ISO 10483-1.
3 This is the continuous current drawn from the battery when the input is low and includes leakage current to the load.
4 This is the continuous current drawn from the battery with no load connected, but with the input high.
5 The measured current is in the load pin only.
6 The supply and input voltage for the R
ON tests are continuous.
The specified pulse duration t
p refers only to the applied load current.
July 1996
3
Rev 1.000
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