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參數(shù)資料
| 型號： | 934041420115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT5, S-MINI PACKAGE-5 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 934041420115 |
1997 Sep 10
4
Philips Semiconductors
Product specication
NPN wideband cascode transistor
BFC520
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. MSG =
2. Maximum isolation is defined as the isolation when S21 of the amplifier is reduced to unity (buffer application).
3. IC =5 mA; VCE = 3 V; RS =50 ; ZL = opt; Tamb =25 °C;
fp = 900 MHz; fq = 902 MHz; measured at f(2pq) = 904 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC characteristics of any single transistor
V(BR)CBO
collector-base breakdown voltage
IC = 2.5 A; IE =0
20
V
V(BR)CEO
collector-emitter breakdown voltage IC =10 A; IB =0
8
V
V(BR)EBO
emitter-base breakdown voltage
IE = 2.5 A; IC = 0
2.5
V
ICBO
collector-base leakage current
IE = 0; VCB =6V
50
nA
hFE
DC current gain
IC = 20 mA; VCE = 6 V
60
120
250
AC characteristics of the cascode conguration
fT
transition frequency
IC = 20 mA; VC2-E1 =3V;
f = 1 GHz
7
GHz
Cc
collector capacitance T2
IE =ie = 0; VC2-B2 =1V;
f = 1 MHz
0.55
pF
Cre2
feedback capacitance T2
IC = 0; VC2-E1 =3V;f=1MHz
500
fF
Cre
feedback capacitance
IC = 0; VC2-E1 =3V;f=1MHz
10
fF
MSG
maximum stable power gain; note 1 IC = 20 mA; VC2-E1 =3V;
f = 900 MHz; Tamb =25 °C
31
dB
IC = 20 mA; VC2-E1 =3V;
f = 2 GHz; Tamb =25 °C
19
dB
insertion power gain
IC = 20 mA; VC2-E1 =3V;
f = 900 MHz; Tamb =25 °C
17
dB
IC = 20 mA; VC2-E1 =3V;
f = 2 GHz; Tamb =25 °C
13
dB
maximum isolation; note 2
f = 900 MHz
63
dB
f = 2 GHz
38
dB
F
noise gure
IC = 5 mA; VC2-E1 =3V;
f = 900 MHz;
ΓS = Γopt
1.3
1.6
dB
IP3
third order intercept point (input)
note 3
18
dBm
s
21
2
s
21 s12
2
s
12 s21
kk
2
1
–
×
k
1s
11
s
22
×
s
12
s
21
×
–
2
s
11
2
s
22
2
–
–
+
2s
12
s
21
×
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