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參數(shù)資料
| 型號： | 934041410115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, S-MINI PACKAGE-6 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 96K |
| 代理商： | 934041410115 |
1996 Oct 08
2
Philips Semiconductors
Product specication
Dual NPN wideband transistor
BFM520
FEATURES
Small size
Temperature and hFE matched
Low noise and high gain
High gain at low current and low capacitance at low
voltage
Gold metallization ensures excellent reliability.
APPLICATIONS
Oscillator and buffer amplifiers
Balanced amplifiers
LNA/mixers.
DESCRIPTION
Dual transistor with two silicon NPN RF dies in a surface
mount 6-pin SOT363 (S-mini) package. The transistor is
primarily intended for wideband applications in the
GHz-range in the RF front end of analog and digital cellular
phones, cordless phones, radar detectors, pagers and
satellite TV-tuners.
PINNING - SOT363A
PIN
SYMBOL
DESCRIPTION
1b1
base 1
2e1
emitter 1
3c2
collector 2
4b2
base 2
5e2
emitter 2
6c1
collector 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM210
1
3
64
2
Top view
c1
c2
e1
e2
b1
b2
5
Marking code: N2.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
Cre
feedback capacitance
Ie = 0; VCB = 3 V; f = 1 MHz
0.4
pF
fT
transition frequency
IC = 20 mA; VCE = 3 V; f = 900 MHz
9
GHz
insertion power gain
IC = 20 mA; VCE =3V;
f = 900 MHz; Tamb =25 °C
13
14.5
dB
GUM
maximum unilateral power gain
IC = 20 mA; VCE =3V;
f = 900 MHz; Tamb =25 °C
15
dB
F
noise gure
IC = 5 mA; VCE =3V;
f = 900 MHz;
ΓS = Γopt
1.2
1.6
dB
Rth j-s
thermal resistance from junction
to soldering point
single loaded
230
K/W
double loaded
115
K/W
s
21
2
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