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參數(shù)資料
| 型號(hào)： | 934041390115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT5, S-MINI PACKAGE-5 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 59K |
| 代理商： | 934041390115 |
1996 Oct 08
2
Philips Semiconductors
Product specication
NPN wideband differential transistor
BFE505
FEATURES
Small size
High power gain at low bias current and voltage
Temperature matched
Balanced configuration
hFE matched
Continues to operate at VCE <1V.
APPLICATIONS
Single balanced mixers
Balanced amplifiers
Balanced oscillators.
DESCRIPTION
Emitter coupled dual NPN silicon RF transistor in a surface
mount, 5-pin SOT353 (S-mini) package. The transistor is
primarily intended for applications in the RF front end as a
balanced mixer, a differential amplifier in analog and digital
cellular phones, and in cordless phones, pagers and
satellite TV-tuners.
PINNING - SOT353B
SYMBOL
PIN
DESCRIPTION
b1
1
base 1
e
2
emitter
b2
3
base 2
c2
4
collector 2
c1
5
collector 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
3
5
4
2
Top view
MAM211
c1
c2
e
b1
b2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Any single transistor
Cre
feedback capacitance CBC
Ie = 0; VCB = 3 V; f = 1 MHz
0.25
0.3
pF
MSG/Gmax
maximum power gain
IC = 5 mA; VCE = 3 V; f = 900 MHz
17
dB
IC = 5 mA; VCE = 3 V; f = 2 GHz
10
dB
F
noise gure
IC = 2 mA; VCE = 3 V; f = 900 MHz;
ΓS = Γopt
1.2
1.7
dB
IC = 3 mA; VCE = 3 V; f = 2 GHz;
ΓS = Γopt
1.9
2.1
dB
hFE
DC current gain
IC = 5 mA; VCE = 3 V
60
120
250
Rth j-s
thermal resistance from
junction to soldering point
single loaded
230
K/W
double loaded
115
K/W
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