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參數(shù)資料
| 型號： | 934041380115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT5, S-MINI PACKAGE-5 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 934041380115 |
1996 Oct 08
2
Philips Semiconductors
Product specication
NPN wideband cascode transistor
BFC505
FEATURES
Small size
High power gain at low bias current and high
frequencies
High reverse isolation
Low noise figure
Gold metallization ensures excellent reliability
Minimum operating voltage VC2E1 =1V.
APPLICATIONS
Low voltage, low current, low noise and high gain
amplifiers
Oscillator buffer amplifiers
Wideband voltage-to-current converters.
DESCRIPTION
Cascode amplifier with two discrete dies in a surface
mount, 5-pin SOT353 (S-mini) package. The amplifier is
primarily intended for low power RF communications
equipment, such as pagers and has a very low feedback
capacitance resulting in high isolation.
PINNING - SOT353
PIN
SYMBOL
DESCRIPTION
1b2
base 2
2e1
emitter 1
3b1
base 1
4c1/e2
collector 1/emitter 2
5c2
collector 2
Fig.1 Simplified outline and symbol.
handbook, halfpage
3
1
4
5
2
Top view
MAM212
c2
b2
c1/e2
b1
e1
QUICK REFERENCE DATA
b2 connected to ground via 1 nF (0603) capacitor, e1 connected directly to ground.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Cre
feedback capacitance CB1C2
Ie = 0; VC2-E1 = 0; f = 1 MHz
10
fF
maximum isolation
IC = 5 mA; VC2 =VB2 =3V;
f = 900 MHz
60
dB
MSG
maximum stable power gain
IC = 0.5 mA; VC2 =VB2 =1V;
f = 900 MHz; Tamb =25 °C
22
dB
F
noise gure
IC = 0.5 mA; VC2-E1 =1V;
f = 500 MHz;
ΓS = Γopt
1.1
1.4
dB
IC = 1 mA; VC2-E1 =3V;
f = 900 MHz;
ΓS = Γopt
1.8
2.1
dB
Rth j-s
thermal resistance from
junction to soldering point
single loaded
230
K/W
double loaded
115
K/W
s
21 s12
2
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