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參數(shù)資料
| 型號： | 934041010118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 51K |
| 代理商： | 934041010118 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV32E, BYV32EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
2.4
K/W
to mounting base
both diodes
-
1.6
K/W
R
th j-a
Thermal resistance junction
SOT78 package, in free air
-
60
-
K/W
to ambient
SOT404 and SOT428 packages, pcb
-
50
-
K/W
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 8 A; Tj = 150C
-
0.72
0.85
V
I
F = 20 A
-
1.00
1.15
V
I
R
Reverse current
V
R = VRWM; Tj = 100 C
-
0.2
0.6
mA
V
R = VRWM
-6
30
A
Q
s
Reverse recovery charge
I
F = 2 A; VR
≥ 30 V; -dI
F/dt = 20 A/
s
-
8
12.5
nC
t
rr1
Reverse recovery time
I
F = 1 A; VR
≥ 30 V;
-
20
25
ns
-dI
F/dt = 100 A/
s
t
rr2
Reverse recovery time
I
F = 0.5 A to IR = 1 A; Irec = 0.25 A
-
10
20
ns
V
fr
Forward recovery voltage
I
F = 1 A; dIF/dt = 10 A/
s-
1
-
V
August 2001
2
Rev 1.300
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