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參數(shù)資料
| 型號： | 934033850135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 934033850135 |
1996 Sep 19
4
Philips Semiconductors
Preliminary specication
Transient voltage suppressor diodes
BZG04 series
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8” (10/1000
s pulse); see Fig.4.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an Al2O3 printed-circuit board, 0.7 mm thick; thickness of Cu-layer ≥35 m, see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.5.
For more information please refer to the
“General Part of associated Handbook”.
BZG04-110
124
0.09
0.13
5
185
1.6
5
110
BZG04-120
138
0.09
0.13
5
204
1.5
5
120
BZG04-130
153
0.09
0.13
5
224
1.3
5
130
BZG04-150
168
0.09
0.13
5
249
1.2
5
150
BZG04-160
188
0.09
0.13
5
276
1.1
5
160
BZG04-180
208
0.09
0.13
2
305
1.0
5
180
BZG04-200
228
0.09
0.13
2
336
0.9
5
200
BZG04-220
251
0.09
0.13
2
380
0.8
5
220
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSE CURRENT
at STAND-OFF
VOLTAGE
V(BR)R (V)
at Itest
SZ (%/K) at Itest
Itest
(mA)
V(CL)R (V) at I
RSM (A)
note 1
IR (A)
at VR
(V)
MIN.
MAX.
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