參數(shù)資料
型號(hào)： 934031850112
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-4
文件頁(yè)數(shù)： 19/21頁(yè)
文件大?。?/td> 179K
代理商： 934031850112
1996 Oct 21
7
Philips Semiconductors
Product Specication
VHF push-pull power MOS transistor
BLF278
Fig.9
Power gain as a function of load power,
typical values.
Class-B operation; VDS =50V;IDQ =2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 (per section); RGS =4 (per section).
(1) Th =25 °C.
(2) Th =70 °C.
handbook, halfpage
0
30
20
10
0
200
400
600
MGE682
PL (W)
Gp
(dB)
(1)
(2)
Fig.10 Efficiency as a function of load power,
typical values.
Class-B operation; VDS =50V;IDQ =2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 (per section); RGS =4 (per section).
(1) Th =25 °C.
(2) Th =70 °C.
handbook, halfpage
0
200
400
PL (W)
600
80
60
ηD
(%)
20
0
40
MGE683
(1)
(2)
Fig.11 Load power as a function of input power,
typical values.
Class-B operation; VDS =50V;IDQ =2 × 0.1 A; f = 108 MHz;
ZL = 3.2 + j4.3 (per section); RGS =4 (per section).
(1) Th =25 °C.
(2) Th =70 °C.
handbook, halfpage
0
600
400
200
0
510
15
MGE684
Pi (W)
PL
(W)
(1)
(2)
相關(guān)PDF資料
PDF描述
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