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參數(shù)資料
| 型號： | 934031740113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.45 A, 1400 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, MAM123, 2 PIN |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 116K |
| 代理商： | 934031740113 |
1998 Dec 04
2
Philips Semiconductors
Product specication
Fast soft-recovery controlled
avalanche rectiers
BYD53 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Available in ammo-pack.
DESCRIPTION
Cavity free cylindrical glass SOD81
package through Implotec
(1)
technology. The SOD81 package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
a
k
MAM123
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD53D
200
V
BYD53G
400
V
BYD53J
600
V
BYD53K
800
V
BYD53M
1000
V
BYD53U
1200
V
BYD53V
1400
V
VR
continuous reverse voltage
BYD53D
200
V
BYD53G
400
V
BYD53J
600
V
BYD53K
800
V
BYD53M
1000
V
BYD53U
1200
V
BYD53V
1400
V
IF(AV)
average forward current
Ttp =55 °C; lead length = 10 mm
see Figs 2 and 3;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD53D to M
0.75
A
BYD53U and V
0.85
A
IF(AV)
average forward current
Tamb =65 °C; PCB mounting (see
Fig.17); see Figs 4 and 5;
averaged over any 20 ms period;
see also Figs 10 and 11
BYD53D to M
0.40
A
BYD53U and V
0.45
A
IFRM
repetitive peak forward current
Ttp =55 °C; see Figs 6 and 7
BYD53D to M
6.5
A
BYD53U and V
8.25
A
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