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參數(shù)資料
| 型號(hào)： | 934031270115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.34 A, 1800 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, LLDL, 2 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 934031270115 |
1999 Nov 11
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYD47 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Shipped in 8 mm embossed tape
Smallest surface mount
rectifier outline.
DESCRIPTION
Cavity free cylindrical glass SOD87
package through Implotec
(1)
technology. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRSM
non-repetitive peak reverse voltage
BYD47-16
1700
V
BYD47-18
1900
V
BYD47-20
2100
V
VRRM
repetitive peak reverse voltage
BYD47-16
1600
V
BYD47-18
1800
V
BYD47-20
2000
V
IF(AV)
average forward current
Ttp = 105 °C; see Fig.2;
averaged over any 20 ms period;
see also Fig.6
0.80
A
IF(AV)
average forward current
Tamb =25 °C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
0.34
A
IFRM
repetitive peak forward current
Ttp =85 °C; see Fig.4
8.0
A
Tamb =65 °C; see Fig.5
2.8
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
10
A
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.7
65
+175
°C
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