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參數(shù)資料
| 型號(hào)： | 934030430133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.68 A, 1200 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大小： | 69K |
| 代理商： | 934030430133 |
1996 May 30
9
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYV26 series
BYV26A to E
Dotted line: Tj = 175 °C.
Solid line: Tj =25 °C.
Fig.14 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
02
4
8
(A)
IF
6
2
0
4
MSA853
6
VF (V)
BYV26F and G
Dotted line: Tj = 175 °C.
Solid line: Tj =25 °C.
Fig.15 Forward current as a function of forward
voltage; maximum values.
handbook, halfpage
02
6
8
(A)
IF
6
2
0
4
MBD427
4
VF (V)
Fig.16 Reverse current as a function of junction
temperature; maximum values.
handbook, halfpage
MGC550
0
100
200
103
102
10
1
(
A)
IR
Tj (°C)
VR =VRRMmax.
BYV26A to E
f = 1 MHz; Tj =25 °C.
Fig.17 Diode capacitance as a function of reverse
voltage, typical values.
handbook, halfpage
1
MSA858
10
102
10
3
1
10 2
10
V
(V)
R
Cd
(pF)
BYV26A,B,C
BYV26D,E
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