參數(shù)資料
型號(hào)： 934028860235
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： MICRO MINIATURE, PLASTIC, SMD, SC-61B, 4 PIN
文件頁(yè)數(shù)： 7/11頁(yè)
文件大小： 148K
代理商： 934028860235
1995 Apr 25
5
Philips Semiconductors
Product specication
N-channel dual gate MOS-FETs
BF909; BF909R
Fig.4
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.18.
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb =25 °C; RG1 = 120 k.
handbook, halfpage
0
110
100
90
80
10
50
MLB936
20
30
40
Vunw
(dB
V)
gain reduction (dB)
Fig.5 Transfer characteristics; typical values.
VDS =5V.
Tj =25 °C.
handbook, halfpage
0
30
20
10
0
0.4
2.0
MLB937
0.8
1.2
1.6
I D
(mA)
V
(V)
G1 S
V
= 4 V 3 V
2.5 V
2 V
1.5 V
1 V
G2 S
Fig.6 Output characteristics; typical values.
VDS =5V.
VG2-S =4V.
Tj =25 °C.
handbook, halfpage
0
30
20
10
0
210
MLB938
46
8
I D
(mA)
V
(V)
DS
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
V
= 1.4 V
G1 S
Fig.7
Gate 1 current as a function of gate 1
voltage; typical values.
VDS =5V.
Tj =25 °C.
handbook, halfpage
01
23
200
150
50
0
100
MLB939
I G1
(
A)
V
(V)
G1 S
3 V
2.5 V
2 V
3.5 V
V
= 4 V
G2 S
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