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參數(shù)資料
| 型號： | 934027140185 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMT3, SMD, SC-59, MPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 934027140185 |
2001 Nov 19
2
Philips Semiconductors
Product specication
NPN general purpose transistor
2PD601A
FEATURES
High collector current (max. 100 mA)
Low collector-emitter saturation voltage (max. 500 mV).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in an SC-59 (SOT346) plastic package.
PNP complement: 2PB709A.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
2PD601AQ
ZQ
2PD601AR
ZR
2PD601AS
ZS
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1
Simplified outline SC-59 (SOT346)
and symbol.
handbook, halfpage
12
1
3
2
3
MAM321
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Refer to SC-59 (SOT346) standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
60
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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