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參數(shù)資料
| 型號： | 934026170127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 50 A BUF OR INV BASED PRPHL DRVR, PSFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263-01, 5 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 93K |
| 代理商： | 934026170127 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK202-50Y
TOPFET high side switch
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Battery voltages
V
BG
Continuous off-state supply voltage
-
0
50
V
Reverse battery voltages
1
External resistors:
-V
BG
Repetitive peak supply voltage
R
I = RS ≥ 4.7 k, δ ≤ 0.1
-
32
V
-V
BG
Continuous reverse supply voltage
R
I = RS ≥ 4.7 k
-16
V
I
L
Continuous load current
T
mb ≤ 110 C
-
20
A
P
D
Total power dissipation
T
mb ≤ 25 C
-
125
W
T
stg
Storage temperature
-
-55
175
C
T
j
Continuous junction temperature
2
-
150
C
T
sold
Lead temperature
during soldering
-
250
C
Input and status
I
Continuous input current
-
-5
5
mA
I
S
Continuous status current
-
-5
5
mA
I
Repetitive peak input current
δ ≤ 0.1
-20
20
mA
I
S
Repetitive peak status current
δ ≤ 0.1
-20
20
mA
Inductive load clamping
E
BL
Non-repetitive clamping energy
T
mb = 150 C prior to turn-off
-
1.7
J
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
3
R
th j-mb
Junction to mounting base
-
0.8
1
K/W
R
th j-a
Junction to ambient
in free air
-
60
75
K/W
1 Reverse battery voltage is allowed only with external input and status resistors to limit the currents to a safe value.
2 For normal continuous operation. A higher T
j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates
to protect the switch.
3 Of the output Power MOS transistor.
April 1995
2
Rev 1.100
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