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參數(shù)資料
| 型號(hào)： | 934024350115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SMD, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 934024350115 |
1999 Apr 12
3
Philips Semiconductors
Product specication
PNP general purpose transistors
BC859W; BC860W
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
4
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100 nA
hFE
DC current gain
IC = 2 mA; VCE = 5V;
see Figs 2 and 3
BC859W; BC860W
220
800
BC859BW; BC860BW
220
475
BC859CW; BC860CW
420
800
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
300 mV
IC = 100 mA; IB = 5 mA; note 1
650 mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
600
750
mV
IC = 10 mA; VCE = 5V
820
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
5pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
10
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz
F
noise gure;
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
IC = 200 A; VCE = 5 V; RS =2k;
f = 10 Hz to 15.7 kHz
4dB
IC = 200 A; VCE = 5 V; RS =2k;
f = 1 kHz; B = 200 Hz
4dB
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