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參數(shù)資料
| 型號： | 934024320135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, SMD, SC-70, CMPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 46K |
| 代理商： | 934024320135 |
1999 Apr 12
2
Philips Semiconductors
Product specication
PNP general purpose transistors
BC859W; BC860W
FEATURES
Low current (max. 100 mA)
Low voltage (max. 45 V).
APPLICATIONS
Low noise stages in tape recorders, hi-fi amplifiers and
other audio-frequency equipment.
DESCRIPTION
PNP transistor in a SOT323 plastic package.
NPN complements: BC849W and BC850W.
MARKING
Note
1.
= - : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC859W
4D
BC860W
4H
BC859BW
4B
BC860BW
4F
BC859CW
4C
BC860CW
4G
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT323) and symbol.
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC859W
30
V
BC860W
50
V
VCEO
collector-emitter voltage
open base
BC859W
30
V
BC860W
45
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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