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參數(shù)資料
| 型號(hào)： | 934023530126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 250 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 162K |
| 代理商： | 934023530126 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)當(dāng)前第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
April 1995
2
Philips Semiconductors
Product specication
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching
No secondary breakdown.
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a TO-92
variant envelope, intended for use as
a line current interruptor in telephone
sets and for applications in relay,
high-speed and line transformer
drivers.
PINNING - TO-92 variant
PIN
DESCRIPTION
BSN304
1
gate
2
drain
3
source
BSN304A
1
source
2
gate
3
drain
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
VDS
drain-source voltage
300
V
ID
DC drain current
250
mA
Ptot
total power dissipation up to Tamb = 25 °C
1W
±V
GSO
gate-source voltage
open drain
20
V
RDS(on)
drain-source
on-resistance
ID = 250 mA;
VGS = 10 V
8
VGS(off)
gate-source cut-off
voltage
ID = 1 mA;
VGS = VDS
0.8
2
V
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
3
2
MAM146
s
d
g
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