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參數(shù)資料
| 型號： | 934023500135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 350 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 934023500135 |
2001 Dec 11
2
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSP130
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
APPLICATIONS
Line current interruptor in telephone sets
Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT223 package.
PINNING - SOT223
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain
Fig.1 Simplified outline and symbol.
Marking code BSP130.
handbook, halfpage
MAM054
4
12
3
Top view
s
d
g
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
300
V
ID
drain current (DC)
350
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
1.5
W
VGSO
gate-source voltage
open drain
±20
V
RDSon
drain-source on-state
resistance
ID = 250 mA; VGS =10V
6
VGSoff
gate-source cut-off voltage
ID = 1 mA; VDS =VGS
0.8
2
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
300
V
VGSO
gate-source voltage (DC)
open drain
±20
V
ID
drain current (DC)
350
mA
IDM
peak drain current
1.4
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.5
W
Tstg
storage temperature
55
+150
°C
Tj
junction temperature
150
°C
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