參數資料
型號: 934023500115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 350 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, SC-73, 4 PIN
文件頁數: 6/12頁
文件大?。?/td> 74K
代理商: 934023500115
2001 Dec 11
3
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSP130
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
83.3
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID =10 A; VGS = 0
300
V
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
±100 nA
VGSth
gate-source threshold voltage
ID = 1 mA; VDS =VGS
0.8
2V
RDSon
drain-source on-state resistance
ID = 20 mA; VGS = 2.4 V
4.8
10
ID = 250 mA; VGS =10V
3.7
6
IDSS
drain-source leakage current
VDS = 240 V; VGS =0
100
nA
Y
fs
transfer admittance
ID = 250 mA; VDS = 25 V
200
690
mS
Ciss
input capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
100
120
pF
Coss
output capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
21
30
pF
Crss
feedback capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
10
15
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD =50V;
VGS =0to10V
610
ns
toff
turn-off time
ID = 250 mA; VDD = 50 V;
VGS = 10 to 0 V
46
60
ns
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