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參數(shù)資料
| 型號： | 934022970115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3 |
| 文件頁數(shù)： | 12/24頁 |
| 文件大小： | 127K |
| 代理商： | 934022970115 |
March 1994
2
Philips Semiconductors
Product specication
PNP 4 GHz wideband transistor
BFT93W
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
APPLICATIONS
It is intended as a general purpose
transistor for wideband applications
up to 2 GHz.
DESCRIPTION
Silicon PNP transistor in a plastic,
SOT323 (S-mini) package. The
BFT93W uses the same crystal as the
SOT23 version, BFT93.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
BFT93W Marking code: X1.
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
12
V
IC
collector current (DC)
50
mA
Ptot
total power dissipation
up to Ts =93 °C; note 1
300
mW
hFE
DC current gain
IC = 30 mA; VCE = 5 V
20
50
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz
1
pF
fT
transition frequency
IC = 30 mA; VCE = 5V;
f = 500 MHz
4
GHz
GUM
maximum unilateral power gain IC = 30 mA; VCE = 5V;
f = 500 MHz; Tamb =25 °C
15.5
dB
F
noise gure
IC = 10 mA; VCE = 5V;
f = 500 MHz
2.4
dB
Tj
junction temperature
150
°C
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