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參數(shù)資料
| 型號(hào)： | 934022960115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3 |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | 934022960115 |
May 1994
3
Philips Semiconductors
Product specication
PNP 4 GHz wideband transistor
BFT92W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C (unless otherwise specied).
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
2V
IC
collector current (DC)
25
mA
Ptot
total power dissipation
up to Ts =93 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts =93 °C; note 1
190
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V
50
nA
hFE
DC current gain
IC = 15 mA; VCE = 10 V
20
50
fT
transition frequency
IC = 15 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
4
GHz
Cc
collector capacitance
IE =ie = 0; VCB = 10 V;
f = 1 MHz
0.65
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V;
f = 1 MHz
0.75
pF
Cre
feedback capacitance
IC = 0; VCB = 10 V;
f = 1 MHz
0.5
pF
GUM
maximum unilateral power gain;
note 1
IC = 15 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
17
dB
IC = 15 mA; VCE = 10 V;
f = 1 GHz; Tamb =25 °C
11
dB
F
noise gure
Γs = Γopt; IC = 5 mA;
VCE = 10 V; f = 500 MHz
2.5
dB
Γs = Γopt; IC = 5 mA;
VCE = 10 V; f = 1 GHz
3
dB
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB.
log
=
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