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參數(shù)資料
| 型號(hào)： | 934022950135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 87K |
| 代理商： | 934022950135 |
1995 Sep 18
2
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFR93AW
FEATURES
High power gain
Gold metallization ensures
excellent reliability
SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Marking code: R2.
Fig.1 SOT323
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
12
V
IC
collector current (DC)
35
mA
Ptot
total power dissipation
up to Ts =93 °C; note 1
300
mW
hFE
DC current gain
IC = 30 mA; VCE =5V
40
90
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz;
Tamb =25 °C
0.6
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4
5
GHz
GUM
maximum unilateral power
gain
IC = 30 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
13
dB
IC = 30 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
8
dB
F
noise gure
IC = 5 mA; VCE = 8 V; f = 1 GHz;
Γs = Γopt
1.5
dB
Tj
junction temperature
150
°C
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