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參數(shù)資料
| 型號(hào)： | 934022950115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 934022950115 |
1995 Sep 18
4
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFR93AW
CHARACTERISTICS
Tj =25 °C (unless otherwise specied).
Note
1. GUM is the maximum unilateral power gain, assuming s12 is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
IE = 0; VCB =5V
50
nA
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
Cc
collector capacitance
IE =ie = 0; VCB = 5 V; f = 1 MHz
0.7
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V;
f = 1 MHz
2.3
pF
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz
0.6
pF
fT
transition frequency
IC = 30 mA; VCE =5V;
f = 500 MHz
45
GHz
GUM
maximum unilateral power
gain; note 1
IC = 30 mA; VCE =8V;
f = 1 GHz; Tamb =25 °C
13
dB
IC = 30 mA; VCE =8V;
f = 2 GHz; Tamb =25 °C
8
dB
F
noise gure
IC = 5 mA; VCE =8V;
f = 1 GHz;
Γs = Γopt
1.5
dB
IC = 5 mA; VCE =8V;
f = 2 GHz;
Γs = Γopt
2.1
dB
G
UM
10
s
21
2
1s
11
2
–
() 1s
22
2
–
()
------------------------------------------------------------ dB.
log
=
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