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| 型號： | 934022860135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 934022860135 |
1995 Sep 04
3
Philips Semiconductors
Product specication
NPN 1 GHz wideband transistor
BFS17W
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C (unless otherwise specied).
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
up to Ts =118 °C; note 1
190
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =10V
10
nA
hFE
DC current gain
IC = 2 mA; VCE =1V
25
90
fT
transition frequency
IC = 25 mA; VCE =5V;
f = 500 MHz
1.6
GHz
Cc
collector capacitance
IE =ie = 0; VCB =10V;
f=1MHz
0.8
1.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V;
f=1MHz
2
pF
Cre
feedback capacitance
IB =ib = 0; VCE =5V;
f = 1 MHz; Tamb =25 °C
0.75
pF
F
noise gure
IC = 2 mA; VCE =5V;
f = 500 MHz;
ΓS = Γopt
4.5
dB
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
0
MLB587
150
T
( C)
o
s
Ptot
(mW)
300
400
100
Fig.3
DC current gain as a function of collector
current; typical values.
VCE =1V.
handbook, halfpage
60
20
40
MBG237
0
110
hFE
IC (mA)
101
102
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