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參數(shù)資料
| 型號： | 934011650127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 47K |
| 代理商： | 934011650127 |
Philips Semiconductors
Product specification
Rectifier diodes
BYW29E series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 100V/ 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F
≤ 0.895 V
Reverse surge capability
High thermal cycling performance
I
F(AV) = 8 A
Low thermal resistance
I
RRM
≤ 0.2 A
t
rr
≤ 25 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode
1
cathode
power supplies.
2
anode
The BYW29E series is supplied in
the conventional leaded SOD59
tab
cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYW29E
-100
-150
-200
V
RRM
Peak repetitive reverse
-
100
150
200
V
voltage
V
RWM
Working peak reverse
-
100
150
200
V
voltage
V
R
Continuous reverse voltage
-
100
150
200
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
mb
≤ 128 C
-
8
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb
≤ 128 C
-
16
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
80
A
current
t = 8.3 ms
-
88
A
sinusoidal; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
t
p = 2
s; δ = 0.001
-
0.2
A
surge current
I
RSM
Peak non-repetitive reverse
t
p = 100
s
-
0.2
A
surge current
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 40
150
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
k
a
12
1
tab
2
August 2001
1
Rev 1.400
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