
1997 Feb 14
2
Philips Semiconductors
Product specication
NPN microwave power transistors
RX1214B80W; RX1214B130Y
FEATURES
Suitable for short and medium
pulse applications up to 1 ms pulse
width, 10% duty factor
Diffused emitter ballasting resistors
improve ruggedness
Interdigitated emitter-base
structure provides high emitter
efficiency
Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power
sharing and reduces thermal
resistance
Internal input and output
prematching networks allow an
easier design of circuits.
APPLICATIONS
Common-base class C broadband
pulsed power amplifiers for radar
applications in the 1.2 to 1.4 GHz
band. Also suitable for long pulse,
heavy duty operation within this band.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with base connected to
flange.
QUICK REFERENCE DATA
Microwave performance up to Tmb =25 °C in a common-base class C
narrowband amplier.
MODE OF
OPERATION
CONDITIONS
f
(GHz)
VCC
(V)
PL
(W)
Gp
(dB)
ηC
(%)
Class C
RX1214B80W
tp = 500 s;
δ = 10%
1.2 to
1.4
40
≥80
≥7
≥35
Class C
RX1214B130Y
tp = 150 s;
δ =5%
1.2 to
1.4
50
≥130
≥7
≥35
PINNING - SOT439A
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to ange
Fig.1 Simplified outline and symbol.
handbook, 4 columns
e
c
b
MAM045
1
2
Top view
3
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.