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參數(shù)資料
| 型號： | 934002840112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 0.8 A, 600 V, SCR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 934002840112 |
Philips Semiconductors
Product specification
Thyristors
BT169 series
logic level
Fig.1. Maximum on-state dissipation, P
tot, versus
average on-state current, I
T(AV), where
a = form factor = I
T(RMS)/ IT(AV).
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM, versus pulse width tp, for
sinusoidal currents, t
p ≤ 10ms.
Fig.3. Maximum permissible rms current I
T(RMS) ,
versus lead temperature, T
lead.
Fig.4. Maximum permissible non-repetitive peak
on-state current I
TSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; T
lead ≤ 83C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj)/ VGT(25C), versus junction temperature Tj.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
a = 1.57
1.9
2.2
2.8
4
IF(AV) / A
Ptot / W
Tc(max) / C
125
119
113
107
101
95
89
83
conduction
angle
form
factor
degrees
30
60
90
120
180
4
2.8
2.2
1.9
1.57
77
a
1
10
100
1000
0
2
4
6
8
10
Number of half cycles at 50Hz
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
1
10
100
1000
10us
100us
1ms
10ms
T / s
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
0.01
0.1
1
10
0
0.5
1
1.5
2
surge duration / s
IT(RMS) / A
-50
0
50
100
150
0
0.2
0.4
0.6
0.8
1
Tlead / C
IT(RMS) / A
83 C
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
September 2001
3
Rev 1.500
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