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| 型號(hào)： | 933994050114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 9/14頁(yè) |
| 文件大?。?/td> | 119K |
| 代理商： | 933994050114 |
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1997 Feb 20
4
Philips Semiconductors
Product specication
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
THERMAL CHARACTERISTICS
Notes
1. See “
Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb =25 °C unless otherwise specied.
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C measured in the test jig as shown in Fig.7 and working in class C broadband
in pulse mode; note 1.
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. VCC during pulse.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base Tj = 125 °C
3.2
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink Tj = 125 °C; note 1
0.2
K/W
Zth jh
thermal impedance from junction to heatsink
tp =10 s; δ =10%;
Tj = 125 °C; notes 1 and 2
0.43
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
ICBO
collector cut-off current
VCB =65V; IE = 0
40
mA
VCB =50V; IE =0
4
mA
ICES
collector cut-off current
VCB =60V; RBE = 0
40
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
400
A
MODE OF OPERATION
f
(GHz)
VCC
(V)(2)
PL
(W)
Gp
(dB)
η
C
(%)
Zi/ZL
(
)
Class C;
tp =10 s; δ = 10%
0.960 to 1.215
50
≥100
typ. 115
≥7
typ. 7.6
≥42
typ. 44
see Figs 8 and 9
tp = 300 s; δ = 10%;
see Fig.6
1.03 to 1.09
50
typ. 125
typ. 8
typ. 50
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