• 參數(shù)資料
    型號(hào)： 933986360115
    廠商： NXP SEMICONDUCTORS
    元件分類： 小信號(hào)晶體管
    英文描述： 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR
    封裝： PLASTIC, SMD, SC-73, 4 PIN
    文件頁(yè)數(shù)： 2/8頁(yè)
    文件大小： 49K
    代理商： 933986360115
    2001 May 31
    2
    Philips Semiconductors
    Product specication
    PNP Darlington transistors
    BSP60; BSP61; BSP62
    FEATURES
    High current (max. 0.5 A)
    Low voltage (max. 80 V)
    Integrated diode and resistor.
    APPLICATIONS
    Industrial switching applications such as:
    – Print hammer
    – Solenoid
    – Relay and lamp drivers.
    DESCRIPTION
    PNP Darlington transistor in a SOT223 plastic package.
    NPN complements: BSP50, BSP51 and BSP52.
    PINNING
    PIN
    DESCRIPTION
    1
    base
    2, 4
    collector
    3
    emitter
    Fig.1 Simplified outline (SOT223) and symbol.
    4
    12
    3
    MAM266
    Top view
    1
    2, 4
    3
    LIMITING VALUES
    In accordance with the Absolute Maximum Rating System (IEC 60134).
    Note
    1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
    For other mounting conditions, see
    “Thermal considerations for the SOT223 in the General Part of associated
    Handbook”.
    SYMBOL
    PARAMETER
    CONDITIONS
    MIN.
    MAX.
    UNIT
    VCBO
    collector-base voltage
    open emitter
    BSP60
    60
    V
    BSP61
    80
    V
    BSP62
    90
    V
    VCES
    collector-emitter voltage
    VBE =0
    BSP60
    45
    V
    BSP61
    60
    V
    BSP62
    80
    V
    VEBO
    emitter-base voltage
    open collector
    5V
    IC
    collector current (DC)
    1A
    ICM
    peak collector current
    2A
    IB
    base current (DC)
    100
    mA
    Ptot
    total power dissipation
    Tamb ≤ 25 °C; note 1
    1.25
    W
    Tstg
    storage temperature
    65
    +150
    °C
    Tj
    junction temperature
    150
    °C
    Tamb
    operating ambient temperature
    65
    +150
    °C
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