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參數(shù)資料
| 型號： | 933984380602 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | SRAM |
| 英文描述： | 16 X 4 STANDARD SRAM, 8 ns, PDIP16 |
| 封裝： | 0.300 INCH, PLASTIC, MO-001AE, SOT-38-1, DIP-16 |
| 文件頁數(shù)： | 8/15頁 |
| 文件大小： | 155K |
| 代理商： | 933984380602 |
Philips Semiconductors
Product specification
74F219A
64-bit TTL bipolar RAM, non-inverting (3-State)
2
1996 Jan 05
853-1308 16196
FEATURES
High speed performance
Replaces 74F219
Address access time: 8ns max vs 28ns for 74F219
Power dissipation: 4.3mW/bit typ
Schottky clamp TTL
One chip enable
Non–Inverting outputs (for inverting outputs see 74F189A)
3–state outputs
74F219A in 150 mil wide SO is preferred options for new designs
C3F219A in 300 mil wide SOL replaces 74F219 in existing
designs
DESCRIPTION
The 74F219A is a high speed, 64–bit RAM organized as a 16–word
by 4–bit array. Address inputs are buffered to minimize loading and
are fully decoded on chip. The outputs are in high impedance state
whenever the chip enable (CE) is high. The outputs are active only
in the READ mode (WE = high) and the output data is the
complement of the stored data.
APPLICATIONS
Scratch pad memory
Buffer memory
Push down stacks
Control store
PIN CONFIGURATION
16
15
14
13
12
11
10
7
6
5
4
3
2
1
D0
D3
D2
Q2
Q3
A1
A2
A0
CE
Q1
WE
D1
GND
9
8
Q0
VCC
A3
SF00307
TYPE
TYPICAL ACCESS TIME
TYPICAL SUPPLY CURRENT(TOTAL)
74F219A
5.0ns
55mA
ORDERING INFORMATION
ORDER CODE
DESCRIPTION
COMMERCIAL RANGE
VCC = 5V ±10%, Tamb = 0°C to +70°C
DRAWING NUMBER
16-pin plastic Dual In-line Package
N74F219AN
SOT38-4
16-pin plastic Small Outline (150mil)
N74F219AD
SOT109-1
16-pin plastic Small Outline Large (300mil)
C3F219AD
SOT162–1
INPUT AND OUTPUT LOADING AND FAN OUT TABLE
PINS
DESCRIPTION
74F (U.L.)
HIGH/LOW
LOAD VALUE
HIGH/LOW
D0 – D3
Data inputs
1.0/1.0
20
A/0.6mA
A0 – A3
Address inputs
1.0/1.0
20
A/0.6mA
CE
Chip enable input (active low)
1.0/2.0
20
A/1.2mA
WE
Write enable input (active low)
1.0/2.0
20
A/1.2mA
Q0 – Q3
Data outputs
150/40
3mA/24mA
NOTE: One (1.0) FAST unit load is defined as: 20
A in the high state and 0.6mA in the low state.
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