參數(shù)資料
型號: 933981790126
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 200 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
封裝: PLASTIC, SPT, SOT-54 VARIANT, 3 PIN
文件頁數(shù): 6/12頁
文件大?。?/td> 76K
代理商: 933981790126
April 1995
3
Philips Semiconductors
Product specication
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Transistor mounted on printed circuit board, maximum lead length 4 mm,
mounting pad for drain lead minimum 10 mm x 10 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
drain-source voltage
250
V
V GSO
gate-source voltage
open drain
20
V
I
D
drain current
DC
0.2
A
I
DM
drain current
peak value
0.6
A
Ptot
total power dissipation
Tamb =25 °C (note 1)
1W
Tstg
storage temperature range
65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
MAX.
UNIT
Rth j-a
from junction to ambient (note 1)
125
K/W
Fig.2 Power derating curve.
handbook, halfpage
0
1.2
0.8
0.4
0
50
100
200
150
MRC238
Ptot
(W)
Tamb (°C)
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