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| 型號(hào)： | 933978520112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 16/21頁(yè) |
| 文件大小： | 179K |
| 代理商： | 933978520112 |
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1996 Oct 21
4
Philips Semiconductors
Product Specication
VHF push-pull power MOS transistor
BLF278
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor section
V(BR)DSS
drain-source breakdown voltage VGS = 0; ID =50mA
110
V
IDSS
drain-source leakage current
VGS = 0; VDS =50V
2.5
mA
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0
1
A
VGSth
gate-source threshold voltage
VDS =10V; ID =50mA
2
4.5
V
GS
gate-source voltage difference
of both sections
VDS =10V; ID =50mA
100
mV
gfs
forward transconductance
VDS =10V; ID = 5 A
4.5
6.2
S
gfs1/gfs2
forward transconductance ratio
of both sections
VDS =10V; ID =5A
0.9
1.1
RDSon
drain-source on-state resistance VGS = 10 V; ID =5A
0.2
0.3
IDSX
drain cut-off current
VGS = 10 V; VDS =10V
25
A
Cis
input capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
480
pF
Cos
output capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
190
pF
Crs
feedback capacitance
VGS = 0; VDS = 50 V; f = 1 MHz
14
pF
Cd-f
drain-ange capacitance
5.4
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
VDS =10V.
handbook, halfpage
0
5
102
101
MGE623
110
4
3
2
1
T.C.
(mV/K)
ID (A)
Fig.5
Drain current as a function of gate-source
voltage; typical values per section.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
0
30
20
10
0
5
ID
(A)
10
VGS (V)
15
MGE622
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