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參數資料
| 型號： | 933978500112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | CERAMIC PACKAGE-4 |
| 文件頁數： | 12/17頁 |
| 文件大?。?/td> | 126K |
| 代理商： | 933978500112 |
November 1992
4
Philips Semiconductors
Product specication
UHF power MOS transistor
BLF521
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 3 mA
40
V
IDSS
drain-source leakage current
VGS = 0; VDS = 12.5 V
10
A
IGSS
gate-source leakage current
±VGS = 20 V; VDS =0
1
A
VGS(th)
gate-source threshold voltage
ID = 3 mA; VDS =10V
2
4.5
V
gfs
forward transconductance
ID = 0.3 A; VDS = 10 V
80
135
mS
RDS(on)
drain-source on-state resistance
ID = 0.3 A; VGS =15V
3.5
4
IDSX
on-state drain current
VGS = 15 V; VDS =10V
1.3
A
Cis
input capacitance
VGS =0;VDS = 12.5 V; f = 1 MHz
5.3
pF
Cos
output capacitance
VGS =0;VDS = 12.5 V; f = 1 MHz
7.8
pF
Crs
feedback capacitance
VGS =0;VDS = 12.5 V; f = 1 MHz
1.8
pF
Fig.4
Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
VDS =10V.
handbook, halfpage
15
5
10
0
MDA485
1
ID (A)
T.C
(mV/K)
10
102
103
Fig.5
Drain current as a function of gate-source
voltage, typical values.
VDS =10V; Tj =25 °C.
handbook, halfpage
04
20
1600
1200
400
0
800
812
16
MDA484
ID
(mA)
VGS (V)
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