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參數(shù)資料
| 型號： | 933975350115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 48K |
| 代理商： | 933975350115 |
1999 Apr 14
3
Philips Semiconductors
Product specication
PNP switching transistor
PZT3906
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
115
K/W
Rth j-s
thermal resistance from junction to soldering point
34
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6V
50
nA
hFE
DC current gain
VCE = 1 V; (see Fig.2)
IC = 0.1 mA
60
IC = 1mA
80
IC = 10 mA
100
300
IC = 50 mA
60
IC = 100 mA
30
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 1mA
200
mV
IC = 50 mA; IB = 5mA
200
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1mA
650
850
mV
IC = 50 mA; IB = 5mA
950
mV
Cc
collector capacitance
IE =ie = 0; VCB = 5 V; f = 1 MHz
4.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
10
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz 250
MHz
F
noise gure
IC = 100 A; VCE = 5 V; RS =1k;
f = 10 Hz to 15.7 kHz
4dB
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
ICon = 10 mA; IBon = 1 mA;
IBoff =1mA
65
ns
td
delay time
35
ns
tr
rise time
35
ns
toff
turn-off time
300
ns
ts
storage time
225
ns
tf
fall time
75
ns
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