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參數(shù)資料
| 型號(hào)： | 933975330135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 46K |
| 代理商： | 933975330135 |
1999 Apr 14
3
Philips Semiconductors
Product specication
NPN switching transistor
PZT2222A
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
109
K/W
Rth j-s
thermal resistance from junction to soldering point
28
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =60V
10
nA
IE = 0; VCB =60V; Tamb = 125 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE =10V
35
IC = 1 mA; VCE =10V
50
IC = 10 mA; VCE =10V
75
IC = 10 mA; VCE =10V;
Tamb = 55 °C
35
IC = 150 mA; VCE = 1 V; note 1
50
IC = 150 mA; VCE = 10 V; note 1
100
300
IC = 500 mA; VCE = 10 V; note 1
40
VCEsat
collector-emitter saturation voltage
IC = 150 mA; IB =15mA
300
mV
IC = 500 mA; IB =50mA
1V
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA
0.6
1.2
V
IC = 500 mA; IB =50mA
2V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
8pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
25
pF
fT
transition frequency
IC = 20 mA; VCE = 20 V; f = 100 MHz 300
MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff = 15 mA; Tamb =25 °C
35
ns
td
delay time
10
ns
tr
rise time
25
ns
toff
turn-off time
250
ns
ts
storage time
200
ns
tf
fall time
60
ns
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