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| 型號： | 933966340235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | PLASTIC SMD, 3 PIN |
| 文件頁數(shù)： | 7/8頁 |
| 文件大?。?/td> | 277K |
| 代理商： | 933966340235 |
Philips Semiconductors
PMBF170
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 03 — 23 June 2000
7 of 13
9397 750 07208
Philips Electronics N.V. 2000. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 150 °C; VDS ≥ ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa34
0
0.5
1
1.5
2
2.5
3
-60
-20
20
60
100
140
180
typ
min
V
GS(th)
(V)
T
j
(
o
C)
03aa37
0
0.5
1
1.5
2
2.5
3
typ
min
I
D
(A)
V
GS
(V)
10-6
10-5
10-4
10-3
10-2
10-1
03aa07
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Tj = 25
o
C
150
o
C
VDS> IDX RDSon
g
fs
(S)
I
D
(A)
03aa09
1
10
102
10-1
110
102
Ciss
Coss
Crss
C
iss
, C
oss
C
rss
(pF)
V
DS
(V)
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