參數(shù)資料
型號(hào)： 933932330215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 500 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SOT-23, 3 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 43K
代理商： 933932330215
1999 Apr 08
3
Philips Semiconductors
Product specication
PNP Darlington transistors
BCV26; BCV46
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
BCV26
IE = 0; VCB = 30 V
100 nA
BCV46
IE = 0; VCB = 60 V
100 nA
IEBO
emitter cut-off current
IC = 0; VEB = 10 V
100 nA
hFE
DC current gain
IC = 1 mA; VCE = 5 V; (see Fig.2)
BCV26
4000
BCV46
2000
DC current gain
IC = 10 mA; VCE = 5 V; (see Fig.2)
BCV26
10000
BCV46
4000
DC current gain
IC = 100 mA; VCE = 5 V; (see Fig.2)
BCV26
20000
BCV46
10000
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA
1V
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEon
base-emitter on-state voltage
IC = 10 mA; VCE = 5V
1.4
V
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 100 MHz
220
MHz
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