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參數(shù)資料
| 型號： | 933932320235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 933932320235 |
1999 Apr 08
3
Philips Semiconductors
Product specication
NPN Darlington transistors
BCV27; BCV47
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
BCV27
IE = 0; VCBO =30V
100
nA
BCV47
IE = 0; VCBO =60V
100
nA
IEBO
emitter cut-off current
IE = 0; VEB =10V
100
nA
hFE
DC current gain
VCE = 5 V; (see Fig.2)
BCV27
IC = 1 mA
4 000
IC = 10 mA
10000
IC = 100 mA
20000
DC current gain
VCE = 5 V; (see Fig.2)
BCV47
IC = 1 mA
2 000
IC = 10 mA
4 000
IC = 100 mA
10000
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA
1V
VBEsat
base-emitter saturation voltage
IC = 100 mA; IB = 0.1 mA
1.5
V
VBEon
base-emitter on-state voltage
IC = 10 mA; VCE =5V
1.4
V
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 100 MHz
220
MHz
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