參數(shù)資料
型號(hào)： 933932320185
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SST3, SMD, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 43K
代理商： 933932320185
1999 Apr 08
2
Philips Semiconductors
Product specication
NPN Darlington transistors
BCV27; BCV47
FEATURES
Medium current (max. 500 mA)
Low voltage (max. 60 V)
High DC current gain (min. 20000).
APPLICATIONS
Preamplifier input applications.
DESCRIPTION
NPN Darlington transistor in a SOT23 plastic package.
PNP complements: BCV26 and BCV46.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BCV27
FF
BCV47
FG
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
MAM298
13
2
1
3
2
TR2
TR1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BCV27
40
V
BCV47
80
V
VCES
collector-emitter voltage
open base
BCV27
30
V
BCV47
60
V
VEBO
emitter-base voltage
open collector
10
V
IC
collector current (DC)
500
mA
ICM
peak collector current
800
mA
IB
base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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