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參數(shù)資料
| 型號(hào)： | 933931830115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 齊納二極管 |
| 英文描述： | 39 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 933931830115 |
2002 Feb 28
2
Philips Semiconductors
Product specication
Voltage regulator diodes
BZV55 series
FEATURES
Total power dissipation: max. 500 mW
Two tolerance series: ±2%, and approx. ±5%
Working voltage range: nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically
sealed glass SOD80C SMD packages. The diodes are
available in the normalized E24
±2% (BZV55-B) and
approx.
±5% (BZV55-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
columns
MAM215
ka
Fig.1
Simplified outline (SOD80C) and symbol.
The cathode is indicated by a yellow band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a ceramic substrate of 10
× 10 × 0.6 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
250
mA
IZSM
non-repetitive peak reverse current
tp = 100 s; square wave;
Tj =25 °C prior to surge
see Tables 1 and 2 A
Ptot
total power dissipation
Tamb ≤ 50 °C; note 1
400
mW
tie-point
≤ 50 °C; note 1
500
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 s; square wave;
Tj =25 °C prior to surge; see Fig.3
40
W
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
65
+200
°C
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